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  Datasheet File OCR Text:
 LL4148 / LL4448
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode Fast switching diodes 500mw power dissipation High temperature soldering guaranteed 250/10S at terminals
MINI MELF (LL-34)
0.063(1.6) 0.055(1.4) DIA.
MECHANICAL DATA
Case: MINI MELF glass sealed envelope. Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.002 ounce, 0.05 grams
0.020(0.5) 0.012(0.3) 0.146(3.7) 0.130(3.3) 0.020(0.5) 0.012(0.3)
Dimensions in inches and (millimeters)
Maximum Ratings (
Characteristic
Non-Repetitive Peak Voltage
T =25 C Unless otherwise noted) A
Symbol
VRM VPWM VRWM VR IO IFSM Pd RJA
TJ,TSTG
LL4148 / LL4448
100 75 150 2.0 500 300 -65 to +175
Unit
V V mA A mW K/W C
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current (1) Non-Repetitive Peak Forward Surge Current @t=1.0us Power Dissipation Thermal Resistance Junction to Ambient Operating and Strorage Temperature Range
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage IR = 100ua Forward Voltage IF=10 mA LL4148 LL4448 IF=5 mA IF=100 mA Leakage Current VR =20V VR =75V VR =75V, Tj=150 C Junction Capacitance Reverse Recovery Time IF=10 mA, IR=1mA, VR =6V, RL=100
( TA=25 C Unless otherwise noted) Symbol
V(BR)R
Min
100
Max
-
Unit
V
VF
0.62
1.0 0.72 1.0 25 5 50 4 4
V
IR Cj TRR
-
A PF nS
Note: 1.Valid Provided that device Terminals are Kept at Ambient Temperature.
LL4148 / LL4448
RATINGS AND CHARACTERISTIC CURVES
FIG. 1-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
700 600 500 400 300 200 100 0 0 100 200
FIG. 2-REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE (TYPICAL VALUES)
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
1
P,POWER DISSIPATION,MILLIWATTS
800
0.1
0.01
0.001
TJ=25 C
AMBIENT TEMPERATURE,
0.0001
40
60
80
100
120
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 3-FORWARD CHARACTERISTICS
16
INSTANTANEOUS FORWARD CURRENT,MILLIAMPERES
12 10 8 6 4 2 0 0 1 2V
Ctot(vR) RELATIVE CAPACTANCE Ctot(0v)
14
FIG. 4-RELATIVE CAPACTANCE VERSUS REVERSE VOLTAGE
1.2
1.0
0.8
0.6
INSTANTANEOUS FORWARD VOLEAGE, V0LTS
0.4 0 5 10V
REVERSE VOLTAGE,VOLTS.
FIG. 5-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
100 n=tp/T V=tp/T T=1/fp 10
tp
IFRM,PEAK FORWARD CURRENT,AMPERES
n=0 0.1
IFRM
T
1
0.2 0.5
0.1 0.01 0.1 1 10 100 1000ms
tp,PULSE DURATION,ms


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